Simulation of trigate fet with semi-cylindrical channel to reduce corner effect
Trigate Field Effect Transistor (FET) is one of the promising devices to overcome MOSFET scaling. However, major problems arised due to edge of the corner which introduced a high leakage current as well as reliability issues. In this work, we have introduced a method to reduce these issues by incorp...
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my.utm.513072017-06-21T10:25:53Z http://eprints.utm.my/id/eprint/51307/ Simulation of trigate fet with semi-cylindrical channel to reduce corner effect Ismail, Razali Hamid, Fatimah TK Electrical engineering. Electronics Nuclear engineering Trigate Field Effect Transistor (FET) is one of the promising devices to overcome MOSFET scaling. However, major problems arised due to edge of the corner which introduced a high leakage current as well as reliability issues. In this work, we have introduced a method to reduce these issues by incorporating a semi-cylindrical channel through simulation. Based on simulated results, it was found that this method can minimize the leakage current. In addition, this structure makes the device less sensitive to temperature effect and more robust. Besides, radius variation can be used to reduce leakage current even smaller. It was found that the maximum drive current of this device is higher compared to reported silicon nanowire trigate MOSFET. 2013 Conference or Workshop Item PeerReviewed Ismail, Razali and Hamid, Fatimah (2013) Simulation of trigate fet with semi-cylindrical channel to reduce corner effect. In: UKSIM-AMSS 15Th International Conference On Computer Modelling And Simulation (UKSIM 2013), 10-12 April 2013, Cambridge, United Kingdom. http://dx.doi.org/10.1109/UKSim.2013.13 |
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TK Electrical engineering. Electronics Nuclear engineering Ismail, Razali Hamid, Fatimah Simulation of trigate fet with semi-cylindrical channel to reduce corner effect |
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Trigate Field Effect Transistor (FET) is one of the promising devices to overcome MOSFET scaling. However, major problems arised due to edge of the corner which introduced a high leakage current as well as reliability issues. In this work, we have introduced a method to reduce these issues by incorporating a semi-cylindrical channel through simulation. Based on simulated results, it was found that this method can minimize the leakage current. In addition, this structure makes the device less sensitive to temperature effect and more robust. Besides, radius variation can be used to reduce leakage current even smaller. It was found that the maximum drive current of this device is higher compared to reported silicon nanowire trigate MOSFET. |
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Conference or Workshop Item |
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Ismail, Razali Hamid, Fatimah |
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Ismail, Razali Hamid, Fatimah |
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Ismail, Razali |
title |
Simulation of trigate fet with semi-cylindrical channel to reduce corner effect |
title_short |
Simulation of trigate fet with semi-cylindrical channel to reduce corner effect |
title_full |
Simulation of trigate fet with semi-cylindrical channel to reduce corner effect |
title_fullStr |
Simulation of trigate fet with semi-cylindrical channel to reduce corner effect |
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Simulation of trigate fet with semi-cylindrical channel to reduce corner effect |
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simulation of trigate fet with semi-cylindrical channel to reduce corner effect |
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2013 |
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http://eprints.utm.my/id/eprint/51307/ http://dx.doi.org/10.1109/UKSim.2013.13 |
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1643653001162784768 |
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13.160551 |