Simulation of trigate fet with semi-cylindrical channel to reduce corner effect

Trigate Field Effect Transistor (FET) is one of the promising devices to overcome MOSFET scaling. However, major problems arised due to edge of the corner which introduced a high leakage current as well as reliability issues. In this work, we have introduced a method to reduce these issues by incorp...

Full description

Saved in:
Bibliographic Details
Main Authors: Ismail, Razali, Hamid, Fatimah
Format: Conference or Workshop Item
Published: 2013
Subjects:
Online Access:http://eprints.utm.my/id/eprint/51307/
http://dx.doi.org/10.1109/UKSim.2013.13
Tags: Add Tag
No Tags, Be the first to tag this record!