Analytical modeling of trilayer graphene nanoribbon schottky-barrier fet for high-speed switching applications

• Main Authors: Rahmani, Meisam, Ahmadi, Mohammad Taghi, Feiz Abadi, Hediyeh Karimi, Saeidmanesh, Mehdi, Akbari, Elnaz, Ismail, Razali
• Format: Article
• Language: English
• Published: Springer Link 2013
• Subjects: TA Engineering (General). Civil engineering (General)
• Online Access: http://eprints.utm.my/id/eprint/50441/1/MohammadTaghiAhmadi2013_Analyticalmodelingoftrilayer.pdf; http://eprints.utm.my/id/eprint/50441/; https://link.springer.com/article/10.1186/1556-276X-8-55

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistor s. The current–voltage characteristic of...