Analytical modeling of trilayer graphene nanoribbon schottky-barrier fet for high-speed switching applications
Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistor s. The current–voltage characteristic of...
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Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
Springer Link
2013
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/50441/1/MohammadTaghiAhmadi2013_Analyticalmodelingoftrilayer.pdf http://eprints.utm.my/id/eprint/50441/ https://link.springer.com/article/10.1186/1556-276X-8-55 |
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