Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET

• Main Authors: Tan, Michael Loong Peng, Lentaris, Georgios, Amaratunga, Gehan A. J.
• Format: Article
• Language: English
• Published: Springer 2012
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/33445/1/MichaelLoongPengTan2012_DeviceandCircuit-LevelPerformanceofCarbon.pdf; http://eprints.utm.my/id/eprint/33445/; http://dx.doi.org/10.1186/1556-276X-7-467

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained...