Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optic...
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Main Authors: | Asri, R. I. M, Hamzah, N. A, Ahmad, M. A., Alias, E. A., Sahar, M. M., Abdullah, M. |
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Format: | Conference or Workshop Item |
Language: | English |
Published: |
2020
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Online Access: | http://eprints.usm.my/49101/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2082.pdf http://eprints.usm.my/49101/ |
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