High-K LaCeO For Passivation Of Si Substrate
High dielectric constant rare earth lanthanum cerium oxide (LaCeO) films have been studied as the passivation layers for silicon substrate. Effects of post-deposition annealing time (15, 30, and 45 min) was carried out at 700ºC towards structural and morphological characteristics of the films. As th...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48846/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20115.pdf http://eprints.usm.my/48846/ |
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