Metal-Oxide-Semiconductor Characteristics of Zr-Oxynitride Thin Film on 4H-SiC Substrate
Sputtered Zr on 4H-SiC substrate and followed by simultaneous oxidation and nitridation in nitrous oxide ambient at various temperatures (400–900°C) for 15 min have been systematically investigated. The structural and electrical properties of the samples were evaluated. Energy-filtered transmission...
Saved in:
Main Authors: | , |
---|---|
Format: | Article |
Published: |
Electrochemical Society
2012
|
Subjects: | |
Online Access: | http://eprints.um.edu.my/13000/ http://jes.ecsdl.org/content/159/3/H293.abstract http://dx.doi.org/10.1149/2.081203jes |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|