The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
In this paper, we present the study of the electrical, structural and optical properties of p-type GaN grown on sapphire by RF plasma-assisted molecular beam epitaxy (RF-MBE).
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2007
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my.usm.eprints.14827 http://eprints.usm.my/14827/ The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy. C, W Chin Hassan, Z. F, K Yam QC1 Physics (General) In this paper, we present the study of the electrical, structural and optical properties of p-type GaN grown on sapphire by RF plasma-assisted molecular beam epitaxy (RF-MBE). 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/14827/1/paper4.pdf C, W Chin and Hassan, Z. and F, K Yam (2007) The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur. |
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QC1 Physics (General) C, W Chin Hassan, Z. F, K Yam The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy. |
| description |
In this paper, we present the study of the electrical, structural and optical properties of p-type GaN grown on sapphire by RF plasma-assisted molecular beam epitaxy
(RF-MBE).
|
| format |
Conference or Workshop Item |
| author |
C, W Chin Hassan, Z. F, K Yam |
| author_facet |
C, W Chin Hassan, Z. F, K Yam |
| author_sort |
C, W Chin |
| title |
The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
|
| title_short |
The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
|
| title_full |
The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
|
| title_fullStr |
The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
|
| title_full_unstemmed |
The Growth Of Highly Doped p-GaN On Sapphire By RF Plasma-Assisted Molecular Beam Epitaxy.
|
| title_sort |
growth of highly doped p-gan on sapphire by rf plasma-assisted molecular beam epitaxy. |
| publishDate |
2007 |
| url |
http://eprints.usm.my/14827/1/paper4.pdf http://eprints.usm.my/14827/ |
| _version_ |
1643702776798117888 |
| score |
13.18916 |