RF substrate noise characterization for CMOS 0.18μm
In the submicron technologies, RF noise isolation is becoming increasingly important. In this paper, the investigations of the on-chip RF isolation techniques were carried out. The chosen isolation structures were the Deep Nwell (or triple well isolation) and the P+ Guard Ring. The test structures w...
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Main Authors: | Ishak, I.S., Keating, R.A., Chakrabarty, C.K. |
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Format: | Conference Paper |
Language: | en_US |
Published: |
2017
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