RF substrate noise characterization for CMOS 0.18μm

In the submicron technologies, RF noise isolation is becoming increasingly important. In this paper, the investigations of the on-chip RF isolation techniques were carried out. The chosen isolation structures were the Deep Nwell (or triple well isolation) and the P+ Guard Ring. The test structures w...

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Bibliographic Details
Main Authors: Ishak, I.S., Keating, R.A., Chakrabarty, C.K.
Format: Conference Paper
Language:en_US
Published: 2017
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