RF substrate noise characterization for CMOS 0.18?m

In the submicron technologies, RF noise isolation is becoming increasingly important. In this paper, the investigations of the on-chip RF isolation techniques were carried out. The chosen isolation structures were the Deep Nwell (or triple well isolation) and the P+ Guard Ring. The test structures w...

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Bibliographic Details
Main Authors: Ishak I.S., Keating R.A., Chakrabarty C.K.
Other Authors: 9942783300
Format: Conference paper
Published: 2023
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