RF substrate noise characterization for CMOS 0.18μm

• Main Authors: Ishak, I.S., Keating, R.A., Chakrabarty, C.K.
• Format: Conference Paper
• Language: en_US
• Published: 2017

In the submicron technologies, RF noise isolation is becoming increasingly important. In this paper, the investigations of the on-chip RF isolation techniques were carried out. The chosen isolation structures were the Deep Nwell (or triple well isolation) and the P+ Guard Ring. The test structures w...