TCAD Simulation of STI stress effect on active length for 130nm technology
In this paper we investigated the compressive stress in the channel induced by shallow trench isolation (STI) for different active length (Sa). We simulate both PMOS and NMOS for 130nm gate length with five active lengths (Sa=0.34, 0.5, 0.8, 1.0, 5.0um) by using TCAD simulation and compare to experi...
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| Main Authors: | , , , |
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2017
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| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5302 |
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