TCAD simulation of local mechanical stress reduction by use of a compressive silicon nitride/silicon oxynitride etch stop bi-layer for CMOS performance enhancement

• Main Authors: Ahmad, W.R.W., Kordesch, A.V., Ahmad, I., Chew, S.A., Yew, P.T.B.
• Published: 2017
• Online Access: http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5314

In this paper we investigate the mechanism of local mechanical stress reduction in CMOS transistors by improving the Inter Layer Dielectric (ILD) process. We changed the Etch Stop Liner (ESL) from single stack silicon nitride (SiN) to dual stack ESL SiN/SiON similar to [1]. We then simulate the stre...