RF substrate noise characterization for CMOS 0.18?m
In the submicron technologies, RF noise isolation is becoming increasingly important. In this paper, the investigations of the on-chip RF isolation techniques were carried out. The chosen isolation structures were the Deep Nwell (or triple well isolation) and the P+ Guard Ring. The test structures w...
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Main Authors: | Ishak I.S., Keating R.A., Chakrabarty C.K. |
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Other Authors: | 9942783300 |
Format: | Conference paper |
Published: |
2023
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