Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device
In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process parameters...
Saved in:
| Main Authors: | , , , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 出版: |
2023
|
| 主題: | |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|