Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device

• Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.
• Other Authors: 36239165300
• Format: Article
• Published: 2023
• Subjects: 45nm PMOS device; Component; HALO; S/D Implantation; Taguchi Method; Threshold Voltage

In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process parameters...