Influence of HALO and source/drain implantation on threshold voltage in 45nm PMOS device

• المؤلفون الرئيسيون: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.
• مؤلفون آخرون: 36239165300
• التنسيق: مقال
• منشور في: 2023
• الموضوعات: 45nm PMOS device; Component; HALO; S/D Implantation; Taguchi Method; Threshold Voltage

In this paper, we investigate the influence of process parameters like HALO and Source/Drain (S/D) Implantation on threshold voltage in 45nm PMOS device. The settings of process parameters were determined by using Taguchi experimental design method. The level of importance of the process parameters...