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Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length

benchmarking; computer simulation; design; dielectric property; electronic equipment; optimization; performance assessment; threshold

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Main Authors: Abidin N.F.Z., Ahmad I., Ker P.J., Menon P.S.
Other Authors: 36994666100
Format: Article
Published: Penerbit Universiti Kebangsaan Malaysia 2023
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spelling my.uniten.dspace-231712023-05-29T14:38:10Z Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length Abidin N.F.Z. Ahmad I. Ker P.J. Menon P.S. 36994666100 12792216600 37461740800 57201289731 benchmarking; computer simulation; design; dielectric property; electronic equipment; optimization; performance assessment; threshold A planar Graphene Field-Effect Transistor GFET performance with 60 nm gate length was evaluated in discovering new material to meet the relentless demand for higher performance-power saving features. The ATHENA and ATLAS modules of SILVACO TCAD simulation tool was employed to virtually design and assess the electrical performance of GFET. The developed model was benchmarked with the established results obtained from the DESSIS simulator model by using the same graphene channel's parameters and simulated at fixed threshold voltage of 0.4V. The GFET was also analyzed and ranked its performance for four different gate oxides which includes HfO2, Al2O3, TiO2, and Ta2O5. Compared to the benchmarked device, our GFET shows a competitive performance although it possesses a lower drive current (ION). However, the leakage current (IOFF), subthreshold swing (SS) and the device's switching capability (ION/IOFF) are more superior than those of the benchmarked device, with an improvement of 99%, 48.3% and 99.36%, respectively. The with different gate dielectrics were also proven to possess a lower IOFF, competitive ION, smaller SS and better switching capability compared to the established DESSISS model. The graphene parameters in this experiment can be utilized for further optimization of GFET with smaller gate lengths. Final 2023-05-29T06:38:10Z 2023-05-29T06:38:10Z 2017 Article 10.17576/jsm-2017-4607-11 2-s2.0-85029900179 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85029900179&doi=10.17576%2fjsm-2017-4607-11&partnerID=40&md5=7fc525b0b84cca3e098e7adb371bba09 https://irepository.uniten.edu.my/handle/123456789/23171 46 7 1089 1095 All Open Access, Bronze Penerbit Universiti Kebangsaan Malaysia Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
url_provider http://dspace.uniten.edu.my/
description benchmarking; computer simulation; design; dielectric property; electronic equipment; optimization; performance assessment; threshold
author2 36994666100
author_facet 36994666100
Abidin N.F.Z.
Ahmad I.
Ker P.J.
Menon P.S.
format Article
author Abidin N.F.Z.
Ahmad I.
Ker P.J.
Menon P.S.
spellingShingle Abidin N.F.Z.
Ahmad I.
Ker P.J.
Menon P.S.
Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length
author_sort Abidin N.F.Z.
title Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length
title_short Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length
title_full Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length
title_fullStr Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length
title_full_unstemmed Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length
title_sort performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length
publisher Penerbit Universiti Kebangsaan Malaysia
publishDate 2023
_version_ 1806428358298304512
score 13.214268

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