Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

Purpose – The quality of GeOx–Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. I...

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Bibliographic Details
Main Authors: Siti Kudnie, Sahari, Muhammad, Kashif, Norsuzailina, Mohamed Sutan, Zaidi, Embong, Nik Amni Fathi, Nik Zaini Fathi, Azrul Azlan, Hamzah, Rohana, Sapawi, Burhanuddin, Yeop Majlis, Ibrahim, Ahmad
Format: Article
Language:English
Published: Emerald Publishing Limited 2017
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Online Access:http://ir.unimas.my/id/eprint/16683/1/Sahari.pdf
http://ir.unimas.my/id/eprint/16683/
http://www.emeraldinsight.com/doi/full/10.1108/MI-12-2015-0099
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