Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node
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Universiti Malaysia Perlis (UniMAP)
2019
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my.unimap-611212019-08-01T08:40:32Z Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node Pathak, Jay Darji, Anand jaypathak050@gmail.com FinFET InGaAs Interface traps and parasitic capacitance Nanoscale devices Link to publisher's homepage at http://ijneam.unimap.edu.my FinFET technology has emerged to be one of the advanced nanoscale devices for Moore’s Law. The presence of several parasitic components in FinFET has significant effect on the device performance for the channel length of the order 14 nm. The III-V materials are replacing Silicon in FinFET technology to overcome the challenges faced by Silicon. The III-V compound semiconductors material such as Indium Gallium Arsenic (InGaAs), when used as channel material with high-K dielectric oxide materials faces a critical problem of interface traps. In this paper, the significance of interface traps at different energy levels was analysed in 14 nm InGaAs FinFET at high-k/InGaAs channel material. Apart from, the interface traps the gate parasitic capacitance of FinFET with channel material of InGaAs beyond 14 nm gate length was also investigated. 2019-08-01T08:40:32Z 2019-08-01T08:40:32Z 2019-07 Article International Journal of Nanoelectronics and Materials, vol.12(3), 2019, pages 319-328 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/61121 en Universiti Malaysia Perlis (UniMAP) |
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English |
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FinFET InGaAs Interface traps and parasitic capacitance Nanoscale devices |
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FinFET InGaAs Interface traps and parasitic capacitance Nanoscale devices Pathak, Jay Darji, Anand Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node |
| description |
Link to publisher's homepage at http://ijneam.unimap.edu.my |
| author2 |
jaypathak050@gmail.com |
| author_facet |
jaypathak050@gmail.com Pathak, Jay Darji, Anand |
| format |
Article |
| author |
Pathak, Jay Darji, Anand |
| author_sort |
Pathak, Jay |
| title |
Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node |
| title_short |
Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node |
| title_full |
Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node |
| title_fullStr |
Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node |
| title_full_unstemmed |
Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node |
| title_sort |
impact of interface traps and parasitic capacitance on gate capacitance of in0.53ga0.47as-finfet for sub 14nm technology node |
| publisher |
Universiti Malaysia Perlis (UniMAP) |
| publishDate |
2019 |
| url |
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/61121 |
| _version_ |
1643806584230379520 |
| score |
13.250246 |