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Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node

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Bibliographic Details
Main Authors: Pathak, Jay, Darji, Anand
Other Authors: jaypathak050@gmail.com
Format: Article
Language:English
Published: Universiti Malaysia Perlis (UniMAP) 2019
Subjects:
FinFET
InGaAs
Interface traps and parasitic capacitance
Nanoscale devices
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/61121
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id my.unimap-61121
record_format dspace
spelling my.unimap-611212019-08-01T08:40:32Z Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node Pathak, Jay Darji, Anand jaypathak050@gmail.com FinFET InGaAs Interface traps and parasitic capacitance Nanoscale devices Link to publisher's homepage at http://ijneam.unimap.edu.my FinFET technology has emerged to be one of the advanced nanoscale devices for Moore’s Law. The presence of several parasitic components in FinFET has significant effect on the device performance for the channel length of the order 14 nm. The III-V materials are replacing Silicon in FinFET technology to overcome the challenges faced by Silicon. The III-V compound semiconductors material such as Indium Gallium Arsenic (InGaAs), when used as channel material with high-K dielectric oxide materials faces a critical problem of interface traps. In this paper, the significance of interface traps at different energy levels was analysed in 14 nm InGaAs FinFET at high-k/InGaAs channel material. Apart from, the interface traps the gate parasitic capacitance of FinFET with channel material of InGaAs beyond 14 nm gate length was also investigated. 2019-08-01T08:40:32Z 2019-08-01T08:40:32Z 2019-07 Article International Journal of Nanoelectronics and Materials, vol.12(3), 2019, pages 319-328 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/61121 en Universiti Malaysia Perlis (UniMAP)
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic FinFET
InGaAs
Interface traps and parasitic capacitance
Nanoscale devices
spellingShingle FinFET
InGaAs
Interface traps and parasitic capacitance
Nanoscale devices
Pathak, Jay
Darji, Anand
Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node
description Link to publisher's homepage at http://ijneam.unimap.edu.my
author2 jaypathak050@gmail.com
author_facet jaypathak050@gmail.com
Pathak, Jay
Darji, Anand
format Article
author Pathak, Jay
Darji, Anand
author_sort Pathak, Jay
title Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node
title_short Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node
title_full Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node
title_fullStr Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node
title_full_unstemmed Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node
title_sort impact of interface traps and parasitic capacitance on gate capacitance of in0.53ga0.47as-finfet for sub 14nm technology node
publisher Universiti Malaysia Perlis (UniMAP)
publishDate 2019
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/61121
_version_ 1643806584230379520
score 13.211869

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