Impact of interface traps and parasitic capacitance on gate capacitance of In0.53Ga0.47As-FinFET for sub 14nm technology node

• Main Authors: Pathak, Jay, Darji, Anand
• Other Authors: [e-mail]
• Format: Article
• Language: English
• Published: Universiti Malaysia Perlis (UniMAP) 2019
• Subjects: FinFET; InGaAs; Interface traps and parasitic capacitance; Nanoscale devices
• Online Access: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/61121

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