Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review

• Main Authors: Louis, Gerrer, Ding, J., Amoroso, S. M., Adamu-Lema, F., R., Hussin, Reid, D., Millar, C., Asenov, A.
• Other Authors: [e-mail]
• Format: Article
• Language: English
• Published: Elsevier 2014
• Subjects: MOSFETs; Statistical Variability (SV)
• Online Access: http://dspace.unimap.edu.my:80/dspace/handle/123456789/35523

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