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Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review

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Main Authors: Louis, Gerrer, Ding, J., Amoroso, S. M., Adamu-Lema, F., R., Hussin, Reid, D., Millar, C., Asenov, A.
Other Authors: louis.gerrer@glasgow.ac.uk
Format: Article
Language:English
Published: Elsevier 2014
Subjects:
MOSFETs
Statistical Variability (SV)
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/35523
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spelling my.unimap-355232014-06-15T13:47:52Z Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review Louis, Gerrer Ding, J. Amoroso, S. M. Adamu-Lema, F. R., Hussin Reid, D. Millar, C. Asenov, A. louis.gerrer@glasgow.ac.uk MOSFETs Statistical Variability (SV) Link to publisher's homepage at http://www.journals.elsevier.com In this paper we summarize the impact of Statistical Variability (SV) on device performances and study the impact of oxide trapped charges in combination with SV. Traps time constants are described and analysed in combination with SV and time dependent simulations are performed including SV, random traps and charge injection stochasticity. Finally we demonstrate the necessity of statistical simulations in extracting compact models of aged devices and we address the problem of aged SRAM cell reliability. 2014-06-15T13:47:52Z 2014-06-15T13:47:52Z 2014-04 Article Microelectronics Reliability, vol.54 (4), 2014, pages 682–697 0026-2714 http://dspace.unimap.edu.my:80/dspace/handle/123456789/35523 http://www.sciencedirect.com/science/article/pii/S0026271414000420 10.1016/j.microrel.2014.01.024 en Elsevier
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic MOSFETs
Statistical Variability (SV)
spellingShingle MOSFETs
Statistical Variability (SV)
Louis, Gerrer
Ding, J.
Amoroso, S. M.
Adamu-Lema, F.
R., Hussin
Reid, D.
Millar, C.
Asenov, A.
Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review
description Link to publisher's homepage at http://www.journals.elsevier.com
author2 louis.gerrer@glasgow.ac.uk
author_facet louis.gerrer@glasgow.ac.uk
Louis, Gerrer
Ding, J.
Amoroso, S. M.
Adamu-Lema, F.
R., Hussin
Reid, D.
Millar, C.
Asenov, A.
format Article
author Louis, Gerrer
Ding, J.
Amoroso, S. M.
Adamu-Lema, F.
R., Hussin
Reid, D.
Millar, C.
Asenov, A.
author_sort Louis, Gerrer
title Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review
title_short Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review
title_full Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review
title_fullStr Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review
title_full_unstemmed Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review
title_sort modelling rtn and bti in nanoscale mosfets from device to circuit: a review
publisher Elsevier
publishDate 2014
url http://dspace.unimap.edu.my:80/dspace/handle/123456789/35523
_version_ 1643797831226490880
score 13.214268

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