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Study of the temperature effect on thickness and surface roughness of SiO2

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Bibliographic Details
Main Author: Mohd Azdi Asis
Other Authors: Ruslinda A. Rahim (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Semiconductors
Silicon oxide
Silicon > Oxidation
Integrated circuits > Design and construction
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1990
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spelling my.unimap-19902008-09-16T05:06:03Z Study of the temperature effect on thickness and surface roughness of SiO2 Mohd Azdi Asis Ruslinda A. Rahim (Advisor) Semiconductors Silicon oxide Silicon -- Oxidation Integrated circuits -- Design and construction Access is limited to UniMAP community. Oxidation is one of the most important thermal processes in semiconductor fabrication. The profile of oxide layer is varied to its different applications. Many factors can affect the profile of the SiO2 layer. In this project the effect of silicon oxidation temperature, type of oxidation process and type of wafers on the thickness and surface roughness of SiO2 was investigated. The oxidation temperature is varied at 900ºC, 1000ºC and 1100ºC for both dry and wet thermal oxidation process for N-type and P-type wafer. From the experimental work, as the temperature is increase the growth rate of the oxidation is increase. The wet oxidation resulting higher growth rate but rougher surface as compare to the dry oxidation process while P-type wafer resulting smoother surface but lower growth rate compare to N-type wafer. 1100ºC is the best temperature condition for the thermal oxidation process. 2008-09-08T12:31:59Z 2008-09-08T12:31:59Z 2008-04 Learning Object http://hdl.handle.net/123456789/1990 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Semiconductors
Silicon oxide
Silicon -- Oxidation
Integrated circuits -- Design and construction
spellingShingle Semiconductors
Silicon oxide
Silicon -- Oxidation
Integrated circuits -- Design and construction
Mohd Azdi Asis
Study of the temperature effect on thickness and surface roughness of SiO2
description Access is limited to UniMAP community.
author2 Ruslinda A. Rahim (Advisor)
author_facet Ruslinda A. Rahim (Advisor)
Mohd Azdi Asis
format Learning Object
author Mohd Azdi Asis
author_sort Mohd Azdi Asis
title Study of the temperature effect on thickness and surface roughness of SiO2
title_short Study of the temperature effect on thickness and surface roughness of SiO2
title_full Study of the temperature effect on thickness and surface roughness of SiO2
title_fullStr Study of the temperature effect on thickness and surface roughness of SiO2
title_full_unstemmed Study of the temperature effect on thickness and surface roughness of SiO2
title_sort study of the temperature effect on thickness and surface roughness of sio2
publisher Universiti Malaysia Perlis
publishDate 2008
url http://dspace.unimap.edu.my/xmlui/handle/123456789/1990
_version_ 1643787515840167936
score 13.223943

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