Simulation for forming Shallow Trench Isolation in the IC using TCAD tools
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Universiti Malaysia Perlis
2008
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my.unimap-19772008-09-09T04:10:51Z Simulation for forming Shallow Trench Isolation in the IC using TCAD tools Mohd Faiz Mohd Fauzan Ruslinda A. Rahim (Advisor) Integrated circuits Computer-aided design Silicon Silicon nitride Silicon oxide Metal oxide semiconductors, Complementary Shallow Trench Isolation (STI) Access is limited to UniMAP community. A simulation for forming shallow trench isolation (STI) in the integrated circuit (IC) is introduced. Firstly, using the Taurus Workbench-tools, the first silicon oxide layer and a silicon nitride layer are formed subsequently on the silicon substrate. The lithography and etching are used to open a shallow trench. Then thermal oxidation is performed. The following step is to form the shallow trench isolation by forming the second silicon oxide with high density plasma enhanced chemical vapor deposition. Then an organic spin-on-glass is coated and low temperature baking is performed. After that, partial etching back is formed to remove spin-on-glass outside the shallow trench. This etching recipe has high selectivity between the second silicon oxide layer to spinon-glass. Then curing at temperature above 800°C and etching back are performed with silicon nitride as end point. 2008-09-07T04:17:42Z 2008-09-07T04:17:42Z 2008-04 Learning Object http://hdl.handle.net/123456789/1977 en Universiti Malaysia Perlis School of Microelectronic Engineering |
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Universiti Malaysia Perlis |
| building |
UniMAP Library |
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Institutional Repository |
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Asia |
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Malaysia |
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Universiti Malaysia Perlis |
| content_source |
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http://dspace.unimap.edu.my/ |
| language |
English |
| topic |
Integrated circuits Computer-aided design Silicon Silicon nitride Silicon oxide Metal oxide semiconductors, Complementary Shallow Trench Isolation (STI) |
| spellingShingle |
Integrated circuits Computer-aided design Silicon Silicon nitride Silicon oxide Metal oxide semiconductors, Complementary Shallow Trench Isolation (STI) Mohd Faiz Mohd Fauzan Simulation for forming Shallow Trench Isolation in the IC using TCAD tools |
| description |
Access is limited to UniMAP community. |
| author2 |
Ruslinda A. Rahim (Advisor) |
| author_facet |
Ruslinda A. Rahim (Advisor) Mohd Faiz Mohd Fauzan |
| format |
Learning Object |
| author |
Mohd Faiz Mohd Fauzan |
| author_sort |
Mohd Faiz Mohd Fauzan |
| title |
Simulation for forming Shallow Trench Isolation in the IC using TCAD tools |
| title_short |
Simulation for forming Shallow Trench Isolation in the IC using TCAD tools |
| title_full |
Simulation for forming Shallow Trench Isolation in the IC using TCAD tools |
| title_fullStr |
Simulation for forming Shallow Trench Isolation in the IC using TCAD tools |
| title_full_unstemmed |
Simulation for forming Shallow Trench Isolation in the IC using TCAD tools |
| title_sort |
simulation for forming shallow trench isolation in the ic using tcad tools |
| publisher |
Universiti Malaysia Perlis |
| publishDate |
2008 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/1977 |
| _version_ |
1643787511842996224 |
| score |
13.222552 |