Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS)
Many experiments on the mechanics of nanostructures require the creation of rigid clamps at specific locations. In this work, electron beam induced deposition (EBID) has been used to deposit carbon films that are similar to those that have recently been used for clamping nanostructures. The film de...
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Universiti Malaysia Perlis
2008
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my.unimap-19732008-09-07T03:19:27Z Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS) Nur Liana Kamal Shaiful Nizam Mohyar (Advisor) Electron beams Scanning electron microscopes Silicon Nanostructures Semiconductors Integrated circuits Many experiments on the mechanics of nanostructures require the creation of rigid clamps at specific locations. In this work, electron beam induced deposition (EBID) has been used to deposit carbon films that are similar to those that have recently been used for clamping nanostructures. The film deposition rate was accelerated by placing a paraffin source of hydrocarbon near the area where the EBID deposits were made. High-resolution transmission electron microscopy, electron-energy-loss spectroscopy, Raman spectroscopy, secondary-ionmass spectrometry, and nanoindentation were used to characterize the chemical composition and the mechanics of the carbonaceous deposits. 2008-09-07T03:19:27Z 2008-09-07T03:19:27Z 2008-03 Learning Object http://hdl.handle.net/123456789/1973 en Universiti Malaysia Perlis School of Microelectronic Engineering |
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Electron beams Scanning electron microscopes Silicon Nanostructures Semiconductors Integrated circuits |
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Electron beams Scanning electron microscopes Silicon Nanostructures Semiconductors Integrated circuits Nur Liana Kamal Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS) |
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Many experiments on the mechanics of nanostructures require the creation of rigid
clamps at specific locations. In this work, electron beam induced deposition (EBID) has been used to deposit carbon films that are similar to those that have recently been used for clamping nanostructures. The film deposition rate was accelerated by placing a paraffin source of hydrocarbon near the area where the EBID deposits were made. High-resolution transmission electron microscopy, electron-energy-loss spectroscopy, Raman spectroscopy, secondary-ionmass spectrometry, and nanoindentation were used to characterize the chemical composition and
the mechanics of the carbonaceous deposits. |
author2 |
Shaiful Nizam Mohyar (Advisor) |
author_facet |
Shaiful Nizam Mohyar (Advisor) Nur Liana Kamal |
format |
Learning Object |
author |
Nur Liana Kamal |
author_sort |
Nur Liana Kamal |
title |
Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS) |
title_short |
Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS) |
title_full |
Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS) |
title_fullStr |
Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS) |
title_full_unstemmed |
Analysis of the deposited carbon during Electron Beam Induced Deposition (EBID) in Scanning Electron Microscope using Secondary Ion Mass Spectrometry (SIMS) |
title_sort |
analysis of the deposited carbon during electron beam induced deposition (ebid) in scanning electron microscope using secondary ion mass spectrometry (sims) |
publisher |
Universiti Malaysia Perlis |
publishDate |
2008 |
url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/1973 |
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1643787509731164160 |
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13.214268 |