Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling
This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of t...
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Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
Institute of Advanced Engineering and Science (IAES)
2021
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Subjects: | |
Online Access: | http://umpir.ump.edu.my/id/eprint/30151/1/GAA%20TFET.pdf http://umpir.ump.edu.my/id/eprint/30151/ http://doi.org/10.11591/ijece.v11i1.pp780-787 http://doi.org/10.11591/ijece.v11i1.pp780-787 |
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