Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling

• Main Authors: Abdul-Kadir, Firas Natheer, Hashim, Yasir, Shakib, Mohammed Nazmus, Taha, Faris Hassan
• Format: Article
• Language: English
• Published: Institute of Advanced Engineering and Science (IAES) 2021
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://umpir.ump.edu.my/id/eprint/30151/1/GAA%20TFET.pdf; http://umpir.ump.edu.my/id/eprint/30151/; http://doi.org/10.11591/ijece.v11i1.pp780-787; http://doi.org/10.11591/ijece.v11i1.pp780-787

This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of t...