High step-up flyback with low-overshoot voltage stress on secondary GaN rectifier

• Main Authors: Za'im, Radin, Jamaludin, Jafferi, Yusof, Yushaizad, Abd Rahim, Nasrudin
• Format: Article
• Published: MDPI 2022
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.um.edu.my/41680/

This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. Presently however, comm...