The crystallographic quality and band-edge transition of as-deposited PALE AlN films via metal organic chemical vapor deposition

Diversification of pulse cycle numbers proportional to the AlN films thickness using PALE technique on c-plane sapphire substrate were carried out via MOCVD. It was experiential that the structural features of as-deposited AlN films were significantly impinged on the film thickness where the highest...

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Bibliographic Details
Main Authors: Abd Rahman, Mohd Nazri, Shuhaimi, Ahmad, Seng, Ooi Chong, Tan, Gary, Anuar, Afiq, Talik, Noor Azrina, Abdul Khudus, Muhammad Imran Mustafa, Chanlek, Narong, Abd Majid, Wan Haliza
Format: Article
Published: Springer 2021
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Online Access:http://eprints.um.edu.my/25974/
https://doi.org/10.1007/s10854-020-05070-3
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