A new approach to study carrier generation in graphene nanoribbons under lateral bias
This paper presents a new approach to study the effect of carrier generation on the current of graphene nanoribbon field effect transistors, which is normally ignored in current-voltage (I-V) modelling. Two analytical models together with a Monte Carlo approach including the edge effect scattering a...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
American Scientific Publishers
2016
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/18100/ http://dx.doi.org/10.1166/mex.2016.1305 |
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