A new approach to study carrier generation in graphene nanoribbons under lateral bias

This paper presents a new approach to study the effect of carrier generation on the current of graphene nanoribbon field effect transistors, which is normally ignored in current-voltage (I-V) modelling. Two analytical models together with a Monte Carlo approach including the edge effect scattering a...

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Bibliographic Details
Main Authors: Ahmad, Harith, Ghadiry, Mahdiar, Abd Manaf, Asrulnizam
Format: Article
Published: American Scientific Publishers 2016
Subjects:
Online Access:http://eprints.um.edu.my/18100/
http://dx.doi.org/10.1166/mex.2016.1305
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