Structural characteristics of samarium oxynitride on silicon substrate
Thermal oxynitridation of 20 nm sputtered pure samarium metal film on silicon substrates were carried out in nitrous oxide gas ambient at various temperatures (600–900 °C) for 15 min. Influences of the oxynitridation temperature on the structural and chemical properties of the SmxOyNz films had been...
保存先:
主要な著者: | Goh, K.H., Haseeb, A.S. Md. Abdul, Wong, Y.H. |
---|---|
フォーマット: | 論文 |
出版事項: |
Elsevier
2017
|
主題: | |
オンライン・アクセス: | http://eprints.um.edu.my/17554/ https://doi.org/10.1016/j.jallcom.2017.06.179 |
タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|
類似資料
-
Samarium oxide and samarium oxynitride thin film gate oxides on silicon substrate / Goh Kian Heng
著者:: Goh, Kian Heng
出版事項: (2017) -
Formation of Zr- oxynitride thin films on 4H-SiC substrate
著者:: Wong, Y.H., 等
出版事項: (2012) -
Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate
著者:: Goh, K.H., 等
出版事項: (2016) -
Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations
著者:: Goh, K.H., 等
出版事項: (2016) -
Trap-assisted tunneling mechanism of Zirconium Oxynitride (ZrON) thin film on Silicon Carbide / Nicklaane Krishnamoorthy
著者:: Nicklaane, Krishnamoorthy
出版事項: (2020)