Investigation of silicon nitride capping layer and embedded silicon germanium effect on 90nm CMOS devices / Norlina Mohd Zain

• Main Author: Mohd Zain, Norlina
• Format: Thesis
• Language: English
• Published: 2010
• Subjects: Apparatus and materials
• Online Access: https://ir.uitm.edu.my/id/eprint/102939/1/102939.pdf; https://ir.uitm.edu.my/id/eprint/102939/

This thesis highlights the effect of Si3N4 capping layer, embedded SiGe in the source/drain and SiGe layer on the bottom of the strained silicon for strained-silicon technology effect on 90 nm complementary metal oxide semiconductor (CMOS) performance focusing on threshold voltage and drain current...