A review of high ideality factor in gallium nitride-based light-emitting diode
Theory concerning the high ideality factor of gallium nitride (GaN) based light emitting diode (LED) has been reviewed. The presence of a high ideality factor indicates a large forward voltage that results in efficiency reduction. The paper suggests that tunneling is the main reason defining the exp...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English English English |
| Published: |
Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
2021
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/89339/7/89339_A%20review%20of%20high%20ideality%20factor%20in%20gallium%20nitride-based%20light-emitting%20diode.pdf http://irep.iium.edu.my/89339/13/89339_A%20review%20of%20high%20ideality%20factor%20in%20gallium%20nitride_SCOPUS.pdf http://irep.iium.edu.my/89339/19/88939_wos.pdf http://irep.iium.edu.my/89339/ https://www.scopus.com/record/display.uri?eid=2-s2.0-85103372204&origin=resultslist&sort=plf-f&src=s&sid=7981bd425a8a88c8ca47d40aebd03880&sot=b&sdt=b&sl=93&s=TITLE-ABS-KEY%28A+review+of+high+ideality+factor+in+gallium+nitride-based+light-emitting+diode%29&relpos=0&citeCnt=0&searchTerm= https://doi.org/10.15407/spqeo24.01.083 |
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