Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications
This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high volta...
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| Main Authors: | , , |
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| Format: | Article |
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KOREAN INST POWER ELECTRONICS, RM 408, KOREA SCIENCE & TECHNOLOGY BLDG, 635-4, YEOKSAM-DONG, KANGNAM-GU, SEOUL, 135-703, SOUTH KOREA
2009
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| Subjects: | |
| Online Access: | http://eprints.utp.edu.my/2345/1/SAMPLE_PAPER_PDF.pdf http://apps.isiknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=16&SID=X212JDdPAc7358p5C3D&page=1&doc=1 http://eprints.utp.edu.my/2345/ |
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