Study on capacitance performance of gallium nitride (GaN) diodes in high dose electron irradiation

• Main Authors: Abdullah, Yusof, Hedzir, Anati Syahirah, Hasbullah, Nurul Fadzlin, Che Hak, Cik Rohaida
• Format: Conference or Workshop Item
• Language: English; English; English
• Published: American Institute of Physics Inc. 2019
• Subjects: TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
• Online Access: http://irep.iium.edu.my/72573/19/72573_Study%20on%20capacitance%20performance%20of%20gallium.pdf; http://irep.iium.edu.my/72573/2/72573_Study%20on%20capacitance%20performance_SCOPUS.pdf; http://irep.iium.edu.my/72573/3/72573_Study%20on%20capacitance%20performance_WOS.pdf; http://irep.iium.edu.my/72573/; https://aip.scitation.org/doi/abs/10.1063/1.5089313?journalCode=apc

Impact of 2 MGy and 10 MGy electron irradiation on gallium nitride (GaN) light emitting diodes (LEDs) has been studied. The device was a commercial product (Manufacturer: Vishay) type of GaN Blue LEDs (TLHB5400). The capacitance-voltage (C-V) characteristics of pre- and post-irradiation were measure...