A review of high ideality factor in gallium nitride-based light-emitting diode

• Main Authors: Hedzir, Anati Syahirah, Hasbullah, Nurul Fadzlin
• Format: Article
• Language: English; English; English
• Published: Institute of Semiconductor Physics of National Academy of Sciences of Ukraine 2021
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://irep.iium.edu.my/89339/7/89339_A%20review%20of%20high%20ideality%20factor%20in%20gallium%20nitride-based%20light-emitting%20diode.pdf; http://irep.iium.edu.my/89339/13/89339_A%20review%20of%20high%20ideality%20factor%20in%20gallium%20nitride_SCOPUS.pdf; http://irep.iium.edu.my/89339/19/88939_wos.pdf; http://irep.iium.edu.my/89339/; https://www.scopus.com/record/display.uri?eid=2-s2.0-85103372204&origin=resultslist&sort=plf-f&src=s&sid=7981bd425a8a88c8ca47d40aebd03880&sot=b&sdt=b&sl=93&s=TITLE-ABS-KEY%28A+review+of+high+ideality+factor+in+gallium+nitride-based+light-emitting+diode%29&relpos=0&citeCnt=0&searchTerm=; https://doi.org/10.15407/spqeo24.01.083

Theory concerning the high ideality factor of gallium nitride (GaN) based light emitting diode (LED) has been reviewed. The presence of a high ideality factor indicates a large forward voltage that results in efficiency reduction. The paper suggests that tunneling is the main reason defining the exp...