Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode

• Main Authors: Shaari, Adam, Ahmad Fajri, Faris Azim, Ahmad Noorden, Ahmad Fakhrurrazi, Abdul Kadir@Jaafar, Muhammad Zamzuri, Daud, Suzairi
• Format: Article
• Language: English; English; English; English
• Published: 1098-2760 2020
• Subjects: QC Physics
• Online Access: http://irep.iium.edu.my/84021/25/84021_Optimizing%20the%20efficiency%20of%20gallium%20nitride%E2%80%90based_article_new.pdf; http://irep.iium.edu.my/84021/1/1%202020%20MOTL.pdf; http://irep.iium.edu.my/84021/8/84021_Optimizing%20the%20efficiency%20of%20gallium%20nitride%E2%80%90based_scopus.pdf; http://irep.iium.edu.my/84021/9/84021_Optimizing%20the%20efficiency%20of%20gallium%20nitride%E2%80%90based_wos.pdf; http://irep.iium.edu.my/84021/; https://onlinelibrary.wiley.com/doi/abs/10.1002/mop.32698

A nonuniform current spreading in the current spreader layer greatly reduced the internal quantum efficiency (IQE) of the light-emitting diodes (LED). The effects of the current spreading layer on the electrode contact area toward the IQE in a vertical design of gallium nitride (GaN)-based LED chip...