Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures

• Main Authors: Ahmad Fauzi, Dhiyauddin, Alang Md Rashid, Nahrul Khair, ., Md. Rashid, Che Omar, Nuurul Iffah, Hasbullah, Nurul Fadzlin, Mohamed Zin, muhammad Rawi
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
• Online Access: http://irep.iium.edu.my/46587/1/46587.pdf; http://irep.iium.edu.my/46587/; http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6687122

The use of InAs quantum dots (QDs) in a well (DWELL) structure as a medium to minimize propagation of neutron induced defects is presented. The DWELL samples and GaAs based commercial diodes were radiated with thermal neutron under maximum fluence of 1.4×1016 neutron/cm2. Based on the current-voltag...