Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer
The effects of Si layer thickness on thermal agglomeration of a (111) bonded silicon-on-insulator (SOI) structure were studied. As starting material, (111) bonded SOI wafers with their top Si layer thinned to 2–9 nm were used. The samples were subjected to thermal treatment at 950 °C in ultrahigh va...
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my.utp.eprints.79192012-08-14T03:08:53Z Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer Burhanudin, Zainal Arif Nuryadi, Ratno Ishikawa, Yasuhiko Tabe, Michiharu QC Physics The effects of Si layer thickness on thermal agglomeration of a (111) bonded silicon-on-insulator (SOI) structure were studied. As starting material, (111) bonded SOI wafers with their top Si layer thinned to 2–9 nm were used. The samples were subjected to thermal treatment at 950 °C in ultrahigh vacuum. Atomic force microscopy revealed that, in the 4–9 nm thickness range, the top Si layer is deformed into wire arrays in the 〈112¯〉 directions. However, at thicknesses below 4 nm, randomly formed Si islands were observed. This structural transition from wires to islands is presumably due to the atomic-scale thickness fluctuation in the initial Si layer. 2006-06-05 Article PeerReviewed http://www.sciencedirect.com/science/article/pii/S004060900501922X Burhanudin, Zainal Arif and Nuryadi, Ratno and Ishikawa, Yasuhiko and Tabe, Michiharu (2006) Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer. Thin Solid Films, 508 (1-2). pp. 235-238. http://eprints.utp.edu.my/7919/ |
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QC Physics Burhanudin, Zainal Arif Nuryadi, Ratno Ishikawa, Yasuhiko Tabe, Michiharu Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer |
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The effects of Si layer thickness on thermal agglomeration of a (111) bonded silicon-on-insulator (SOI) structure were studied. As starting material, (111) bonded SOI wafers with their top Si layer thinned to 2–9 nm were used. The samples were subjected to thermal treatment at 950 °C in ultrahigh vacuum. Atomic force microscopy revealed that, in the 4–9 nm thickness range, the top Si layer is deformed into wire arrays in the 〈112¯〉 directions. However, at thicknesses below 4 nm, randomly formed Si islands were observed. This structural transition from wires to islands is presumably due to the atomic-scale thickness fluctuation in the initial Si layer.
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format |
Article |
author |
Burhanudin, Zainal Arif Nuryadi, Ratno Ishikawa, Yasuhiko Tabe, Michiharu |
author_facet |
Burhanudin, Zainal Arif Nuryadi, Ratno Ishikawa, Yasuhiko Tabe, Michiharu |
author_sort |
Burhanudin, Zainal Arif |
title |
Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer
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title_short |
Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer
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title_full |
Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer
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title_fullStr |
Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer
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title_full_unstemmed |
Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer
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title_sort |
transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer |
publishDate |
2006 |
url |
http://www.sciencedirect.com/science/article/pii/S004060900501922X http://eprints.utp.edu.my/7919/ |
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