Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer
The effects of Si layer thickness on thermal agglomeration of a (111) bonded silicon-on-insulator (SOI) structure were studied. As starting material, (111) bonded SOI wafers with their top Si layer thinned to 2–9 nm were used. The samples were subjected to thermal treatment at 950 °C in ultrahigh va...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S004060900501922X http://eprints.utp.edu.my/7919/ |
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