Thermally-induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate
We have found that a Si wire array is formed by thermal agglomeration of an ultrathin (111) Si layer in a bonded silicon-on-insulator (SOI) structure, although previous studies for crystalline and amorphous Si layers on SiO2 only showed island formation. As starting material, (111) bonded SOI wafers...
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| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
American Institute of Physics
2005
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| Subjects: | |
| Online Access: | http://apl.aip.org/resource/1/applab/v87/i12/p121905_s1?isAuthorized=no http://eprints.utp.edu.my/5377/ |
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