Performance analysis of junctionless multi-bridge channel FET with strained SiGe application
In this work, a 12 nm 3-Dimensional (3D) strained Junctionless (JL) Multi-Bridge Channel Field Effect Transistor (MBCFET) with different Germanium (Ge) mole fractions from 0.1 to 0.4 are presented. The strain used in this work is Silicon-Germanium (SiGe) which is applied in between the channels of M...
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Main Authors: | , , , , |
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Format: | Conference or Workshop Item |
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2022
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/98626/ http://dx.doi.org/10.1109/ICSE56004.2022.9863083 |
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