Performance analysis of junctionless multi-bridge channel FET with strained SiGe application
In this work, a 12 nm 3-Dimensional (3D) strained Junctionless (JL) Multi-Bridge Channel Field Effect Transistor (MBCFET) with different Germanium (Ge) mole fractions from 0.1 to 0.4 are presented. The strain used in this work is Silicon-Germanium (SiGe) which is applied in between the channels of M...
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my.utm.986262023-01-25T09:41:55Z http://eprints.utm.my/id/eprint/98626/ Performance analysis of junctionless multi-bridge channel FET with strained SiGe application Affandi, S. Afidah Alias, N. Ezaila Hamzah, Afiq Tan, M. L Peng Hussin, Hanim TK Electrical engineering. Electronics Nuclear engineering In this work, a 12 nm 3-Dimensional (3D) strained Junctionless (JL) Multi-Bridge Channel Field Effect Transistor (MBCFET) with different Germanium (Ge) mole fractions from 0.1 to 0.4 are presented. The strain used in this work is Silicon-Germanium (SiGe) which is applied in between the channels of MBCFET. The electrical performances such as on-current, threshold voltage and potential distributions along the channel are conducted by using the Silvaco TCAD simulator. It was found that the strained JL MBCFET performs better compared to unstrained JL MBCFET. The results show that by inducing strain on JL MBCFET, the on-current increased by 29%, threshold voltage shifted by 0.25 V and potential in the centre of the channel was reduced by 13 %. 2022 Conference or Workshop Item PeerReviewed Affandi, S. Afidah and Alias, N. Ezaila and Hamzah, Afiq and Tan, M. L Peng and Hussin, Hanim (2022) Performance analysis of junctionless multi-bridge channel FET with strained SiGe application. In: 2022 IEEE International Conference on Semiconductor Electronics, ICSE 2022, 15 - 17 August 2022, Virtual, Kuala Lumpur. http://dx.doi.org/10.1109/ICSE56004.2022.9863083 |
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TK Electrical engineering. Electronics Nuclear engineering Affandi, S. Afidah Alias, N. Ezaila Hamzah, Afiq Tan, M. L Peng Hussin, Hanim Performance analysis of junctionless multi-bridge channel FET with strained SiGe application |
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In this work, a 12 nm 3-Dimensional (3D) strained Junctionless (JL) Multi-Bridge Channel Field Effect Transistor (MBCFET) with different Germanium (Ge) mole fractions from 0.1 to 0.4 are presented. The strain used in this work is Silicon-Germanium (SiGe) which is applied in between the channels of MBCFET. The electrical performances such as on-current, threshold voltage and potential distributions along the channel are conducted by using the Silvaco TCAD simulator. It was found that the strained JL MBCFET performs better compared to unstrained JL MBCFET. The results show that by inducing strain on JL MBCFET, the on-current increased by 29%, threshold voltage shifted by 0.25 V and potential in the centre of the channel was reduced by 13 %. |
format |
Conference or Workshop Item |
author |
Affandi, S. Afidah Alias, N. Ezaila Hamzah, Afiq Tan, M. L Peng Hussin, Hanim |
author_facet |
Affandi, S. Afidah Alias, N. Ezaila Hamzah, Afiq Tan, M. L Peng Hussin, Hanim |
author_sort |
Affandi, S. Afidah |
title |
Performance analysis of junctionless multi-bridge channel FET with strained SiGe application |
title_short |
Performance analysis of junctionless multi-bridge channel FET with strained SiGe application |
title_full |
Performance analysis of junctionless multi-bridge channel FET with strained SiGe application |
title_fullStr |
Performance analysis of junctionless multi-bridge channel FET with strained SiGe application |
title_full_unstemmed |
Performance analysis of junctionless multi-bridge channel FET with strained SiGe application |
title_sort |
performance analysis of junctionless multi-bridge channel fet with strained sige application |
publishDate |
2022 |
url |
http://eprints.utm.my/id/eprint/98626/ http://dx.doi.org/10.1109/ICSE56004.2022.9863083 |
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13.18916 |