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Analysis of silicon nanowires synthesized from SIO on silicon wafer substrate

Silicon nanowires (SiNWs) with a diameter about a few nanometers and a length of tens of micrometers on silicon wafers were synthesized by thermal evaporation of silicon monoxide (SiO). The SiNWs were measured by transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS)...

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Main Authors: Hamidinezhad, Habib, Wahab, Yussof, Othaman, Zulkafli, Muhammad, Rosnita, Wibowo, Edy
Format: Book Section
Published: Faculty of Science, Universiti Teknologi Malaysia 2009
Online Access:http://eprints.utm.my/id/eprint/9021/
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spelling my.utm.90212017-09-13T02:33:19Z http://eprints.utm.my/id/eprint/9021/ Analysis of silicon nanowires synthesized from SIO on silicon wafer substrate Hamidinezhad, Habib Wahab, Yussof Othaman, Zulkafli Muhammad, Rosnita Wibowo, Edy Silicon nanowires (SiNWs) with a diameter about a few nanometers and a length of tens of micrometers on silicon wafers were synthesized by thermal evaporation of silicon monoxide (SiO). The SiNWs were measured by transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and Raman spectroscopy. TEM observations show that the silicon nanowires are smooth and EDS analysis indicates that the nanowires have the composition of Si and O elements. It was pointed out that the SiNWs possessed the well crystalline structure. Therefore, it is considered that SiO could be used as Si sources to produce larger-scale SiNWs and crystalline SiNWs may grow from amorphous nuclei. Faculty of Science, Universiti Teknologi Malaysia 2009-05 Book Section PeerReviewed Hamidinezhad, Habib and Wahab, Yussof and Othaman, Zulkafli and Muhammad, Rosnita and Wibowo, Edy (2009) Analysis of silicon nanowires synthesized from SIO on silicon wafer substrate. In: Proceedings of Second International Conference and Workshops on Basic and Applied Sciences & Regional Annual Fundamental Science Seminar 2009. Faculty of Science, Universiti Teknologi Malaysia, - .
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
description Silicon nanowires (SiNWs) with a diameter about a few nanometers and a length of tens of micrometers on silicon wafers were synthesized by thermal evaporation of silicon monoxide (SiO). The SiNWs were measured by transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS) and Raman spectroscopy. TEM observations show that the silicon nanowires are smooth and EDS analysis indicates that the nanowires have the composition of Si and O elements. It was pointed out that the SiNWs possessed the well crystalline structure. Therefore, it is considered that SiO could be used as Si sources to produce larger-scale SiNWs and crystalline SiNWs may grow from amorphous nuclei.
format Book Section
author Hamidinezhad, Habib
Wahab, Yussof
Othaman, Zulkafli
Muhammad, Rosnita
Wibowo, Edy
spellingShingle Hamidinezhad, Habib
Wahab, Yussof
Othaman, Zulkafli
Muhammad, Rosnita
Wibowo, Edy
Analysis of silicon nanowires synthesized from SIO on silicon wafer substrate
author_facet Hamidinezhad, Habib
Wahab, Yussof
Othaman, Zulkafli
Muhammad, Rosnita
Wibowo, Edy
author_sort Hamidinezhad, Habib
title Analysis of silicon nanowires synthesized from SIO on silicon wafer substrate
title_short Analysis of silicon nanowires synthesized from SIO on silicon wafer substrate
title_full Analysis of silicon nanowires synthesized from SIO on silicon wafer substrate
title_fullStr Analysis of silicon nanowires synthesized from SIO on silicon wafer substrate
title_full_unstemmed Analysis of silicon nanowires synthesized from SIO on silicon wafer substrate
title_sort analysis of silicon nanowires synthesized from sio on silicon wafer substrate
publisher Faculty of Science, Universiti Teknologi Malaysia
publishDate 2009
url http://eprints.utm.my/id/eprint/9021/
_version_ 1643645098019258368
score 13.160551

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