Analysis of silicon nanowires synthesized from SIO on silicon wafer substrate
Silicon nanowires (SiNWs) with a diameter about a few nanometers and a length of tens of micrometers on silicon wafers were synthesized by thermal evaporation of silicon monoxide (SiO). The SiNWs were measured by transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS)...
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| Main Authors: | , , , , |
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| Format: | Book Section |
| Published: |
Faculty of Science, Universiti Teknologi Malaysia
2009
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| Online Access: | http://eprints.utm.my/id/eprint/9021/ |
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| Summary: | Silicon nanowires (SiNWs) with a diameter about a few
nanometers and a length of tens of micrometers on silicon
wafers were synthesized by thermal evaporation of silicon
monoxide (SiO). The SiNWs were measured by transmission
electron microscopy (TEM), energy-dispersive X-ray
spectroscopy (EDS) and Raman spectroscopy. TEM observations
show that the silicon nanowires are smooth and EDS analysis indicates that the nanowires have the composition of Si and O elements. It was pointed out that the SiNWs possessed the well crystalline structure. Therefore, it is considered that SiO could be used as Si sources to produce larger-scale SiNWs and crystalline SiNWs may grow from amorphous nuclei. |
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