Explicit continuous models of drain current, terminal charges and intrinsic capacitance for a long-channel junctionless nanowire transistor
An explicit charge-based solution for the drain current, terminal charges and intrinsic capacitance of a long-channel junctionless nanowire transistor (JNT) incorporating the importance of an interface trap density that affect the threshold voltage and the subthreshold slope is presented in this stu...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Published: |
Institute of Physics Publishing
2019
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/87611/ http://dx.doi.org/10.1088/1402-4896/ab139b |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|